1.Jin Xu, Nating Wang and Deren Yang, Influence of oxygen precipitation on copper precipitation in Czochralski silicon, Journal of Applied Physics, 111, pp094907(1) - 094907(4), 2012
2.Jin Xu, Nating Wang and Weiqiang Wang, Synthesis and photoluminescence properties of self-assembled Eu-doped ZnO hollow microspheres, Physica Status Solidi A, 208(12), pp2833-2838, 2011
3.吉川，徐进，点缺陷对硼掺杂直拉硅单晶P/P+外延片中铜沉淀的影响，物理学报，第61卷，第23期， pp236102(1) - 236102(5), 2012
4.张光超，徐进，直拉单晶硅中洁净区形成后铜沉淀行为的研究，物理学报，第62，第7期，pp076103(1) - 076103(6), 2013（此出版年、卷、期的信息为清样上注明日期)
5.Rong Wang, Jin Xu, Chao Chen, Luminescent characteristics of Sr2B2O5: Tb3+, Li+ green phosphor, Materials Letters, 68，pp307-309，2012
6.Jin Xu, Weiqiang Wang, Deren Yang and H. J. Moeller, Transmission electron microscopy investigation of the micro-defects in Czochralski silicon, Journal of Alloys and Compounds, 478，pp758-762，2009
7.Lei Li, Yawen Zhong, Jian Li, Caikang Chen, Aijuan Zhang, Jin Xu and Zhi Ma, Thermally stable and solvent resistant honeycomb structured polystyrene films via photochemical cross-linking, Journal of Materials chemistry, 19, pp222-7227, 2009
8.王荣，徐进，陈朝，白光LED用荧光材料Sr3B2O6:Eu3+，Na+的制备及发光性能，发光学报，第32卷，第10期，pp983-987，2011
9.Jin Xu, Yongzhi Wang, Deren Yang and H. J. Moeller, Influence of nickel precipitation on the formation of denuded zone in Czochralski silicon, Journal of Alloys and Compounds, 502，pp351-355，2010
10.王永志，徐进，王娜婷，吉川，张光超，铜沉淀对直拉硅单晶中洁净区形成的影响，物理学报，第61卷，第1期, pp016105(1) - 016105(8), 201211.
11.Jin Xu, Deren Yang, H.J.Moeller. Influence of copper precipitation on the formation of denuded zone in Czochralski silicon, Journal of Applied Physics, 2007, 102: 114506
12. 徐进， 李福龙，杨德仁. 直拉硅单晶中原生氧沉淀的透射电镜研究，Acta Phys.Sin (物理学报)，2007，56(7)：4113-4116
13. Jin XU, Xiangyang MA, Jinggang LU, Chunlong LI, Deren YANG. Extended defects in nitrogen-doped Czochralski silicon during diode process, Physica B, 2004, 348 : 226-230
14. 徐进，杨德仁，马向阳，李春龙，阙端麟，A.Misiuk. 高压热处理对氧沉淀低温形核的影响，半导体学报，2002，23(4) ：394-398
15. 徐进，杨德仁，储佳，马向阳，阙端麟. 微氮直拉硅单晶中氧化诱生层错透射电镜研究，Acta Phys.Sin (物理学报)， 2004， 53(2) ：550-554
16. Jin XU, Deren YANG, Xiangyang MA, Xuegong YU, Chunlong LI; Duanlin QUE, A.Misiuk. Oxygen precipitation in Czochralski silicon annealed at 450°C under a high pressure of 1 GPa, Physica B, 2003, 327 : 60-64
17. Jin XU, Deren YANG, Chunlong LI, Xiangyang MA, Duanlin QUE, A.Misiuk. Transmission electron microscopy investigation of oxygen precipitation in Czochralski silicon annealed under high pressure, Material Science and Engineering B, 2003, 102 : 84-87
18. Jin XU, Deren YANG, Duanlin QUE, A.Misiuk. Investigation of thermal donors in Czochralski silicon annealed at 450°C under high pressure of 1 GPa, Physica B, 2003, 339 : 204-207
19. Jin XU, Deren YANG, Xiangyang MA, Duanlin QUE, A.Misiuk. Oxygen precipitation kinetics of Czochralski silicon preannealed under high pressure, Physica B, 2003, 340-342 : 1041-1045
20. Zhengqiang XI, Deren YANG, Jin XU, Yujie JI, Duanlin QUE, H.J.Moeller. Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon, Applied Physics Letters, 2003, 83(15) : 3048-3050
21. Deren YANG, Jia CHU, Jin XU, Duanlin QUE. Behavior of oxidation-induced stacking faults in annealed Czochralski silicon doped by nitrogen, Journal of Applied Physics, 2003, 93(11) : 8926-8929
22. Chunlong LI, Xiangyang MA, Jin XU, Xuegong YU, Deren YANG, Duanlin QUE. Effect of Rapid Thermal Process on oxygen precipitation in heavily boron-doped Czochralski silicon wafer, Japanese Journal of Applied Physics, 2003, 42(12) : 7290-7291
23. Deren YANG, Xuegong YU, Xiangyang MA, Jin XU, Liben LI, Duanlin QUE. Germanium effect on void defects in Czochralski silicon, Journal of Crystal Growth, 2002, 243 : 371-374
24. Xuegong YU, Deren YANG, Xiangyang MA, Jin XU, Liben LI, Duanlin QUE. Effect of oxygen precipitation on voids in bulk silicon, Microelectronic Engineering, 2003, 66 : 289-296
25. Zhengqiang XI, Deren YANG, Jun CHEN, Jin XU, Yujie JI, Duanlin QUE, H.J.Moeller. Influence of copper precipitation on oxygen precipitation in Czochralski silicon, Semiconductor Science and Technology, 2004, 19 : 299-305
26. Hongjie WANG, Xiangyang MA, Jin XU, Xuegong YU, Deren YANG. Effects of nitrogen doping on the dissolution of oxygen precipitates in Czochralski silicon during rapid thermal annealing, Semiconductor Science and Technology, 2004, 19 : 715-719
27. Xiangyang Ma , Hui Zhang, Jin Xu, “Synthesis of La1-xCaxMnO3 nanowires by a sol–gel process”, Chem.Phys.Letter, 363(2002), 579
28. Hui Zhang, Xiangyang Ma, Jin Xu, “Directional CdS nanowires fabricated by chemical bath deposition”, J.Crystal.Growth, 246 (2002), 108
29. Hui Zhang, Xiangyang Ma, Jin Xu, Junjie Niu and Deren Yang, “Arrays of ZnO nanowires fabricated by a simple chemical solution route”, Nanotechnology, 14(2003), 423
30. Deren Yang, Gan Wang, Jin Xu, Dongsheng Li, Duanlin Que, C. Funke, H.J. Moeller, “Influence of oxygen precipitates on the warpage of annealed silicon wafers”, Microelectronic Engineering, 66(2003), 345
31. Q.Yang, J.Sha, J.Xu, et al, “Aligned single crystal boron nanowires”, Chem.Phys.Lett, 379 (2003), 87
专利：发明人，专利名称，授权时间，授权国别，专利号:
1.王韦强(申请人研究生)，徐进，自组装氧化锌空心球及其制备方法，2011. 5, 中国，ZL200910113125.412.
2.徐进，王韦强，徐丽丽，一种氧化锌空心微米球及其制备方法， 2012. 7，中国，ZL 2010 1 0502526.1
